SiSH129DN-T1-GE3 P-Channel MOSFET, 35 A, 30 V TrenchFET, 8-Pin 1212 Vishay Siliconix [SiSH129DN-T1-GE3]; 178-3869
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 35 A |
| Maximum Drain Source Voltage | 30 V |
| Package Type | 1212 |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 20 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.8V |
| Minimum Gate Threshold Voltage | 1.5V |
| Maximum Power Dissipation | 52.1 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±20 V |
| Number of Elements per Chip | 1 |
| Transistor Material | Si |
| Width | 3.15mm |
| Forward Diode Voltage | 1.2V |
| Length | 3.15mm |
| Minimum Operating Temperature | -50 °C |
| Maximum Operating Temperature | +150 °C |
| Series | TrenchFET |
| Height | 1.07mm |
| Typical Gate Charge @ Vgs | 47.5 nC @ 10 V |