SiZ350DT-T1-GE3 Dual N-Channel MOSFET, 30 A, 30 V TrenchFET, 8-Pin PowerPAIR 3 x 3 Vishay Siliconix [SiZ350DT-T1-GE3]; 178-3944
Original price
0₫
-
Original price
0₫
Original price
0₫
0₫
-
0₫
Current price
0₫
| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 30 A |
| Maximum Drain Source Voltage | 30 V |
| Package Type | PowerPAIR 3 x 3 |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 9 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 1V |
| Minimum Gate Threshold Voltage | 2.4V |
| Maximum Power Dissipation | 16.7 W |
| Maximum Gate Source Voltage | -12 V, +16 V |
| Number of Elements per Chip | 2 |
| Length | 3mm |
| Maximum Operating Temperature | +150 °C |
| Series | TrenchFET |
| Height | 0.75mm |
| Typical Gate Charge @ Vgs | 13.5 nC @ 10 V |
| Width | 3mm |
| Minimum Operating Temperature | -55 °C |
| Transistor Material | Si |
| Forward Diode Voltage | 1.2V |