SIZF916DT-T1-GE3 Dual N-Channel MOSFET, 40 (Channnel 1) A, 60 (Channel 2) A, 30 (Channel 2) V, 30 (Channnel 1) V [SIZF916DT-T1-GE3]; 178-3705
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 40 (Channnel 1) A, 60 (Channel 2) A |
| Maximum Drain Source Voltage | 30 V |
| Package Type | PowerPAIR 6 x 5 |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 6 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 1.1V |
| Minimum Gate Threshold Voltage | 2.4V |
| Maximum Power Dissipation | 26.6 (Channnel 1) W, 60 (Channel 2) W |
| Maximum Gate Source Voltage | -16 (Channnel 1) V, -12 (Channel 2) V, +16 (Channel 2) V, +20 (Channnel 1) V |
| Number of Elements per Chip | 2 |
| Minimum Operating Temperature | -55 °C |
| Width | 6mm |
| Series | TrenchFET |
| Height | 0.7mm |
| Transistor Material | Si |
| Forward Diode Voltage | 1.2V |
| Length | 5mm |
| Typical Gate Charge @ Vgs | 14.6 (Channel 1) nC @ 10 V, 62 (Channel 2) nC @ 10 V |
| Maximum Operating Temperature | +150 °C |