SQ2364EES-T1_GE3 N-Channel MOSFET, 2 A, 60 V TrenchFET, 3-Pin SOT-23 Vishay Siliconix [SQ2364EES-T1_GE3]; 178-3877
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 0.0833333333333333 |
| Maximum Drain Source Voltage | 60 V |
| Package Type | SOT-23 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 600 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 0.46V |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 3 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±8 V |
| Number of Elements per Chip | 1 |
| Transistor Material | Si |
| Minimum Operating Temperature | -55 °C |
| Series | TrenchFET |
| Typical Gate Charge @ Vgs | 2 nC @ 4.5 V |
| Automotive Standard | AEC-Q101 |
| Maximum Operating Temperature | +175 °C |
| Height | 1.02mm |
| Width | 1.4mm |
| Forward Diode Voltage | 1.2V |
| Length | 3.04mm |