SQA470EEJ-T1_GE3 N-Channel MOSFET, 2.25 A, 30 V TrenchFET, 6-Pin SC-70 Vishay Siliconix [SQA470EEJ-T1_GE3]; 178-3714
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 2.25 A |
| Maximum Drain Source Voltage | 30 V |
| Package Type | SC-70 |
| Mounting Type | Surface Mount |
| Pin Count | 6 |
| Maximum Drain Source Resistance | 90 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 1.6V |
| Minimum Gate Threshold Voltage | 0.6V |
| Maximum Power Dissipation | 13.6 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±12 V |
| Number of Elements per Chip | 1 |
| Forward Diode Voltage | 1.2V |
| Width | 1.35mm |
| Minimum Operating Temperature | -55 °C |
| Transistor Material | Si |
| Length | 2.2mm |
| Typical Gate Charge @ Vgs | 4.1 nC @ 4.5 V |
| Automotive Standard | AEC-Q101 |
| Maximum Operating Temperature | +175 °C |
| Series | TrenchFET |
| Height | 1mm |