SQD40031EL_GE3 P-Channel MOSFET, 100 A, 30 V TrenchFET, 3 + Tab-Pin DPAK Vishay Siliconix [SQD40031EL_GE3]; 178-3950
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 100 A |
| Maximum Drain Source Voltage | 30 V |
| Package Type | TO-252 |
| Mounting Type | Surface Mount |
| Pin Count | 3 + Tab |
| Maximum Drain Source Resistance | 5 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.5V |
| Minimum Gate Threshold Voltage | 1.5V |
| Maximum Power Dissipation | 136 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±20 V |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 186 nC @ 10 V |
| Minimum Operating Temperature | -55 °C |
| Transistor Material | Si |
| Length | 6.73mm |
| Maximum Operating Temperature | +175 °C |
| Series | TrenchFET |
| Height | 6.22mm |
| Width | 2.38mm |
| Forward Diode Voltage | 1.5V |