SQJ431AEP-T1_GE3 P-Channel MOSFET, 9.4 A, 200 V TrenchFET, 8-Pin SO-8 Vishay Siliconix [SQJ431AEP-T1_GE3]; 178-3873
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 9.4 A |
| Maximum Drain Source Voltage | 200 V |
| Package Type | SO-8 |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 760 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.5V |
| Minimum Gate Threshold Voltage | 2.5V |
| Maximum Power Dissipation | 68 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±20 V |
| Number of Elements per Chip | 1 |
| Transistor Material | Si |
| Forward Diode Voltage | 1.2V |
| Width | 5mm |
| Minimum Operating Temperature | -55 °C |
| Length | 5.99mm |
| Maximum Operating Temperature | +175 °C |
| Series | TrenchFET |
| Height | 1.07mm |
| Typical Gate Charge @ Vgs | 55 nC @ 10 V |
| Automotive Standard | AEC-Q101 |