SQJ504EP-T1_GE3 Dual N-Channel MOSFET, 30 (N Channel) A, 30 (P Channel) A, 40 (N Channel) V, 40 (P Channel) V [SQJ504EP-T1_GE3]; 178-3893
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 30 (N Channel) A, 30 (P Channel) A |
| Maximum Drain Source Voltage | 40 V |
| Package Type | SO-8 |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 30 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.5V |
| Minimum Gate Threshold Voltage | 1.5V |
| Maximum Power Dissipation | 34 (N Channel) W, 34 (P Channel) W |
| Maximum Gate Source Voltage | ±20 V |
| Number of Elements per Chip | 2 |
| Width | 5mm |
| Minimum Operating Temperature | -55 °C |
| Transistor Material | Si |
| Height | 1.07mm |
| Forward Diode Voltage | 1.2V |
| Length | 5.99mm |
| Automotive Standard | AEC-Q101 |
| Typical Gate Charge @ Vgs | 18 (N Channel) nC @ 10 V, 56 (P Channel) nC @ 10 V |
| Maximum Operating Temperature | +175 °C |
| Series | TrenchFET |