SQM40016EM_GE3 N-Channel MOSFET, 250 A, 40 V TrenchFET, 7 + Tab-Pin D2PAK Vishay Siliconix [SQM40016EM_GE3]; 178-3926
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 250 A |
| Maximum Drain Source Voltage | 40 V |
| Package Type | D2PAK (TO-263) |
| Mounting Type | Surface Mount |
| Pin Count | 7 + Tab |
| Maximum Drain Source Resistance | 1 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.5V |
| Minimum Gate Threshold Voltage | 3.5V |
| Maximum Power Dissipation | 300 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±20 V |
| Number of Elements per Chip | 1 |
| Minimum Operating Temperature | -55 °C |
| Forward Diode Voltage | 1.5V |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 163 nC @ 10 V |
| Height | 11.3mm |
| Series | TrenchFET |
| Maximum Operating Temperature | +175 °C |
| Length | 10.67mm |
| Automotive Standard | AEC-Q101 |
| Width | 4.83mm |