SQS966ENW-T1_GE3 Dual N-Channel MOSFET, 6 A, 60 V TrenchFET, 8-Pin 1212 Vishay Siliconix [SQS966ENW-T1_GE3]; 178-3727
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 0.25 |
| Maximum Drain Source Voltage | 60 V |
| Package Type | 1212 |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 60 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.5V |
| Minimum Gate Threshold Voltage | 1.5V |
| Maximum Power Dissipation | 27.8 W |
| Maximum Gate Source Voltage | ±20 V |
| Number of Elements per Chip | 2 |
| Transistor Material | Si |
| Maximum Operating Temperature | +175 °C |
| Series | TrenchFET |
| Height | 1.07mm |
| Length | 3.15mm |
| Automotive Standard | AEC-Q101 |
| Width | 3.15mm |
| Minimum Operating Temperature | -55 °C |
| Forward Diode Voltage | 1.1V |
| Typical Gate Charge @ Vgs | 6.2 nC @ 10 V |