SIRA02DP-T1-GE3 N-Channel MOSFET, 50 A, 30 V TrenchFET, 8-Pin PowerPAK SO Vishay [SIRA02DP-T1-GE3]; 787-9361
Original price
0₫
-
Original price
0₫
Original price
0₫
0₫
-
0₫
Current price
0₫
| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 50 A |
| Maximum Drain Source Voltage | 30 V |
| Package Type | PowerPAK SO |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 2.7 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 1.1V |
| Maximum Power Dissipation | 71.4 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -16 V, +20 V |
| Number of Elements per Chip | 1 |
| Transistor Material | Si |
| Width | 5.26mm |
| Height | 1.12mm |
| Length | 6.25mm |
| Maximum Operating Temperature | +150 °C |
| Series | TrenchFET |
| Minimum Operating Temperature | -55 °C |
| Typical Gate Charge @ Vgs | 78 nC @ 10 V |