N-Channel 30-V (D-S) MOSFET PowerPAK SO- [SiRA28BDP-T1-GE3]; 188-4882
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 38 A |
| Maximum Drain Source Voltage | 30 V |
| Package Type | PowerPAK SO |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 12 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.4V |
| Minimum Gate Threshold Voltage | 1.2V |
| Maximum Power Dissipation | 17 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -16 V, +20 V |
| Number of Elements per Chip | 1 |
| Length | 5.99mm |
| Forward Diode Voltage | 1.1V |
| Width | 5mm |
| Minimum Operating Temperature | -55 °C |
| Typical Gate Charge @ Vgs | 9.3 nC @ 10 V |
| Height | 1.07mm |
| Maximum Operating Temperature | +150 °C |