SIS430DN-T1-GE3 N-Channel MOSFET, 21 A, 25 V, 8-Pin PowePAK 1212 Vishay [SIS430DN-T1-GE3]; 814-1308
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 21 A |
| Maximum Drain Source Voltage | 25 V |
| Package Type | PowePAK 1212 |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 6.9 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 1.2V |
| Maximum Power Dissipation | 52 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +150 °C |
| Length | 3.15mm |
| Typical Gate Charge @ Vgs | 26.5 nC @ 10 V |
| Height | 1.12mm |
| Transistor Material | Si |
| Minimum Operating Temperature | -55 °C |
| Width | 3.15mm |