P-Channel 20 V (D-S) MOSFET PowerPAK 121 [SiSH407DN-T1-GE3]; 188-5085
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 25 A |
| Maximum Drain Source Voltage | 20 V |
| Package Type | PowerPAK 1212-SH |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 19.5 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 1V |
| Minimum Gate Threshold Voltage | 0.4V |
| Maximum Power Dissipation | 33 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±8 V |
| Number of Elements per Chip | 1 |
| Minimum Operating Temperature | -55 °C |
| Width | 3.3mm |
| Forward Diode Voltage | 1.2V |
| Typical Gate Charge @ Vgs | 62.5 nC @ 8 V |
| Height | 0.93mm |
| Maximum Operating Temperature | +150 °C |
| Length | 3.3mm |