SISS23DN-T1-GE3 P-Channel MOSFET, 27 A, 20 V TrenchFET, 8-Pin PowerPAK 1212 Vishay [SISS23DN-T1-GE3]; 165-6922
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 27 A |
| Maximum Drain Source Voltage | 20 V |
| Package Type | PowerPAK 1212 |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 11.5 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 0.4V |
| Maximum Power Dissipation | 57 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -8 V, +8 V |
| Number of Elements per Chip | 1 |
| Series | TrenchFET |
| Typical Gate Charge @ Vgs | 195 nC @ 10 V |
| Height | 0.78mm |
| Width | 3.3mm |
| Transistor Material | Si |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Length | 3.3mm |