VISHAY Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 65A; Idm: 150A; 36W [SISS26LDN-T1-GE3]

Mã nhà sản xuất

SISS26LDN-T1-GE3

Thương hiệu

Mã kho

188-5033

Liên hệ

N-Channel 60 V (D-S) MOSFET. TrenchFET® Gen IV power MOSFET Very low RDS x Qg figure-of-merit (FOM) Tuned for the lowest RDS x Qoss FOM

N-Channel 60 V (D-S) MOSFET.

TrenchFET® Gen IV power MOSFET

Very low RDS x Qg figure-of-merit (FOM)

Tuned for the lowest RDS x Qoss FOM

THÔNG SỐ KỸ THUẬT
Manufacturer	Vishay
Manufacturer Part No.	SISS26LDN-T1-GE3
Channel Type	N
Maximum Continuous Drain Current	81.2A
Maximum Drain Source Voltage	60V
Package Type	PowerPAK 1212-8S
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	6.2mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2.5V
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	57W
Transistor Configuration	Single
Maximum Gate Source Voltage	±20V
Width	3.3mm
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	31.5 nC @ 10 V
Length	3.3mm
Maximum Operating Temperature	+150°C
Height	0.78mm
Minimum Operating Temperature	-55°C
Forward Diode Voltage	1.1V

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