SiSS63DN-T1-GE3 [SiSS63DN-T1-GE3]; 200-6848
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 127.5 A |
| Maximum Drain Source Voltage | 20 V |
| Package Type | PowerPAK 1212-8S |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 0.0027 O, 0.0036 O, 0.007 O |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 1.5V |
| Number of Elements per Chip | 1 |
| Series | TrenchFET® Gen III |