Dual N-Channel 30 V (D-S) MOSFET with Sc [SiZF920DT-T1-GE3]; 188-5009
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 76 (Channel 1) A, 197 (Channel 2) A |
| Maximum Drain Source Voltage | 30 (Channel 1) V, 30 (Channel 2) V |
| Package Type | PowerPAIR 6 x 5 F |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 0.0014 (Channel 2) Ω, 0.005 (Channel 1) Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.2 (Channel 2) V, 2.4 (Channel 1) V |
| Minimum Gate Threshold Voltage | 1.1 (Channel 1) V, 1.1 (Channel 2) V |
| Maximum Power Dissipation | 28 (Channel 1) W, 74 (Channel 2) W |
| Transistor Configuration | Dual |
| Maximum Gate Source Voltage | -16 (Channel 1) V, -12 (Channel 2) V, +16 (Channel 2) V, +20 (Channel 1) V |
| Number of Elements per Chip | 2 |
| Width | 5.1mm |
| Length | 6.1mm |
| Maximum Operating Temperature | +150 °C |
| Height | 0.7mm |
| Minimum Operating Temperature | -55 °C |
| Typical Gate Charge @ Vgs | 19 nC @ 15 V (Channel 1), 83 nC @ 15 V (Channel 2) |