SQ2361ES-T1_GE3 P-Channel MOSFET, 2.8 A, 60 V, 3-Pin SOT-23 Vishay [SQ2361ES-T1_GE3]; 146-4445
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 2.8 A |
| Maximum Drain Source Voltage | 60 V |
| Package Type | SOT-23 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 320 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | -2.5V |
| Minimum Gate Threshold Voltage | -1.5V |
| Maximum Power Dissipation | 2 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | 20 V |
| Number of Elements per Chip | 1 |
| Width | 1.4mm |
| Minimum Operating Temperature | -55 °C |
| Automotive Standard | AEC-Q101 |
| Height | 1.02mm |
| Maximum Operating Temperature | +175 °C |
| Forward Diode Voltage | -1.2V |
| Length | 3.04mm |
| Typical Gate Charge @ Vgs | 9 nC |