SQ3419EV-T1_GE3 P-Channel MOSFET, 7.4 A, 40 V SQ Rugged, 6-Pin TSOP Vishay [SQ3419EV-T1_GE3]; 165-6983
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 7.4 A |
| Maximum Drain Source Voltage | 40 V |
| Package Type | TSOP |
| Mounting Type | Surface Mount |
| Pin Count | 6 |
| Maximum Drain Source Resistance | 78 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 1.5V |
| Maximum Power Dissipation | 5 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -12 V, +12 V |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 10 nC @ 4.5 V |
| Transistor Material | Si |
| Maximum Operating Temperature | +175 °C |
| Width | 1.7mm |
| Length | 3.1mm |
| Minimum Operating Temperature | -55 °C |
| Series | SQ Rugged |
| Height | 1mm |