SQ4850EY-T1_GE3 N-Channel MOSFET, 12 A, 60 V SQ Rugged, 8-Pin SOIC Vishay [SQ4850EY-T1_GE3]; 819-3923
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 0 |
| Maximum Drain Source Voltage | 60 V |
| Package Type | SOIC |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 47 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 1.5V |
| Maximum Power Dissipation | 6.8 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Minimum Operating Temperature | -55 °C |
| Automotive Standard | AEC-Q101 |
| Typical Gate Charge @ Vgs | 20 nC @ 10 V |
| Width | 4mm |
| Height | 1.55mm |
| Series | SQ Rugged |
| Maximum Operating Temperature | +175 °C |
| Length | 5mm |
| Transistor Material | Si |