SQD100N04-3M6L-GE3 N-Channel MOSFET, 100 A, 40 V SQ Rugged, 3-Pin DPAK Vishay [SQD100N04-3M6L-GE3]; 819-3939
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 100 A |
| Maximum Drain Source Voltage | 40 V |
| Package Type | DPAK (TO-252) |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 7 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 1.5V |
| Maximum Power Dissipation | 136 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Series | SQ Rugged |
| Width | 6.22mm |
| Length | 6.73mm |
| Typical Gate Charge @ Vgs | 85 nC @ 10 V |
| Automotive Standard | AEC-Q101 |
| Maximum Operating Temperature | +175 °C |
| Height | 2.38mm |
| Transistor Material | Si |
| Minimum Operating Temperature | -55 °C |