SQJB42EP-T1_GE3 Dual N-Channel MOSFET, 30 A, 40 V TrenchFET, 8-Pin SO Vishay [SQJB42EP-T1_GE3]; 134-9154
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 30 A |
| Maximum Drain Source Voltage | 40 V |
| Package Type | SO |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 16 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.5V |
| Minimum Gate Threshold Voltage | 2.5V |
| Maximum Power Dissipation | 48 W |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 2 |
| Length | 6.25mm |
| Maximum Operating Temperature | +175 °C |
| Series | TrenchFET |
| Height | 1.12mm |
| Typical Gate Charge @ Vgs | 17 nC @ 10 V |
| Automotive Standard | AEC-Q101 |
| Width | 5.26mm |
| Forward Diode Voltage | 1.2V |
| Minimum Operating Temperature | -55 °C |