40 V N- and P-Channel Common Drain MOSFE [SQUN702E-T1_GE3]; 188-4925
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N, P |
| Maximum Continuous Drain Current | 20 (Channel 3) A, 30 (Channel 1) A, 30 (Channel 2) A |
| Maximum Drain Source Voltage | 40 (Channel 1) V, 40 (Channel 2) V, 200 (Channel 3) V |
| Package Type | Triple Die |
| Mounting Type | Surface Mount |
| Pin Count | 10 |
| Maximum Drain Source Resistance | 0.0135 (Channel 2) Ω, 0.048 (Channel 1) Ω, 0.06 (Channel 3) Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.5 (Channel 1) V, 2.5 (Channel 2) V, 3.5 (Channel 3) V |
| Minimum Gate Threshold Voltage | 1.5 (Channel 1) V, 1.5 (Channel 2) V, 2.5 (Channel 3) V |
| Maximum Power Dissipation | 48 (Channel 1) W, 48 (Channel 2) W, 60 (Channel 3) W |
| Transistor Configuration | Common Drain |
| Maximum Gate Source Voltage | 20 V |
| Number of Elements per Chip | 3 |
| Automotive Standard | AEC-Q101 |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |
| Typical Gate Charge @ Vgs | 14 nC @ 100 V (Channel 3), 23 nC @ 20 V (Channel 2), 30.2 nC @ 20 V (Channel 1) |