VS-FB190SA10 N-Channel MOSFET, 190 A, 100 V, 4-Pin SOT-227 Vishay [VS-FB190SA10]; 919-0953
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 190 A |
| Maximum Drain Source Voltage | 100 V |
| Package Type | SOT-227 |
| Mounting Type | Surface Mount |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 6.5 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 568 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Length | 38.3mm |
| Typical Gate Charge @ Vgs | 250 nC @ 10 V |
| Height | 12.3mm |
| Transistor Material | Si |
| Width | 25.7mm |