MOSFET 1.2kV 32mOHMS G3 SiC MOSFET [C3M0032120K]; 192-3498
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 63 A |
| Maximum Drain Source Voltage | 1200 V |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 32 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.6V |
| Minimum Gate Threshold Voltage | 1.8V |
| Maximum Power Dissipation | 283 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -8 V, 19 V |
| Number of Elements per Chip | 1 |
| Minimum Operating Temperature | -40 °C |
| Transistor Material | SiC |
| Length | 16.13mm |
| Width | 5.21mm |
| Typical Gate Charge @ Vgs | 118 nC @ 4/15V |
| Height | 23.6mm |
| Maximum Operating Temperature | +175 °C |