MOSFET 1.2kV 75mOHMS G3 SiC MOSFET [C3M0075120D]; 192-3376
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 30 A |
| Maximum Drain Source Voltage | 1200 V |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 75 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 1.7V |
| Maximum Power Dissipation | 113.6 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -8 V, 19 V |
| Number of Elements per Chip | 1 |
| Width | 5.21mm |
| Height | 21.1mm |
| Typical Gate Charge @ Vgs | 54 nC @ 4/15V |
| Minimum Operating Temperature | -55 °C |
| Length | 16.13mm |
| Maximum Operating Temperature | +150 °C |
| Transistor Material | SiC |