MOSFET G3 SiC MOSFET 900V, 120 mOhm [C3M0120090J]; 192-3492
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 22 A |
| Maximum Drain Source Voltage | 900 V |
| Package Type | TO-263 |
| Mounting Type | Surface Mount |
| Pin Count | 7 |
| Maximum Drain Source Resistance | 120 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.5V |
| Minimum Gate Threshold Voltage | 1.8V |
| Maximum Power Dissipation | 83 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -8 V, 18 V |
| Number of Elements per Chip | 1 |
| Width | 9.12mm |
| Minimum Operating Temperature | -55 °C |
| Height | 4.57mm |
| Typical Gate Charge @ Vgs | 17.3 nC @ 4/15V |
| Length | 10.23mm |
| Maximum Operating Temperature | +150 °C |
| Transistor Material | SiC |