MOSFET SiC HalfBridgeModule 1.2kV 450A [CAB450M12XM3]; 192-3386
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| .THÔNG SỐ KỸ THUẬT: | |
|---|---|
| Maximum Drain Source Voltage | 1200 V |
| Maximum Drain Source Resistance | 4.6 mΩ |
| Maximum Gate Threshold Voltage | 3.6V |
| Minimum Gate Threshold Voltage | 1.8V |
| Maximum Power Dissipation | 50 mW |