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Wolfspeed(CREE) Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; 330W; TO247-3; 54ns [C2M0040120D]

Mã nhà sản xuất
C2M0040120D
Thương hiệu
Mã kho
923-0711
Liên hệ
📩 Liên hệ để có giá tốt: [email protected]

Wolfspeed Silicon Carbide Power MOSFETs Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency. Enhancement-mode N-channel SiC technology High Drain-Source breakdown voltages - up to 1200V Multiple devices are easy to parallel and simple to drive High speed switching with low on-resistance Latch-up resistant operation MOSFET Transistors, Wolfspeed

Wolfspeed Silicon Carbide Power MOSFETs

Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.

  • Enhancement-mode N-channel SiC technology
  • High Drain-Source breakdown voltages - up to 1200V
  • Multiple devices are easy to parallel and simple to drive
  • High speed switching with low on-resistance
  • Latch-up resistant operation

MOSFET Transistors, Wolfspeed

THÔNG SỐ KỸ THUẬT
Manufacturer Wolfspeed
Manufacturer Part No. C2M0040120D
Channel Type N
Maximum Continuous Drain Current 60A
Maximum Drain Source Voltage 1200V
Package Type TO-247
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 52mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 4V
Minimum Gate Threshold Voltage 2V
Maximum Power Dissipation 330W
Transistor Configuration Single
Maximum Gate Source Voltage -5 V, +20 V
Number of Elements per Chip 1
Length 16.13mm
Typical Gate Charge @ Vgs 115 nC @ 20 V, 115 nC @ 5 V
Width 5.21mm
Transistor Material SiC
Maximum Operating Temperature +150°C
Minimum Operating Temperature -55°C
Forward Diode Voltage 3.3V
Height 21.1mm

Giá: Liên hệ – gửi mã và số lượng về [email protected] để nhận báo giá nhanh.

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