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Wolfspeed(CREE) Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 48A; 520W; TO247-3; 70ns [C2M0045170D]

Mã nhà sản xuất
C2M0045170D
Thương hiệu
Mã kho
192-3486
Liên hệ
📩 Liên hệ để có giá tốt: [email protected]

Wolfspeed introduces its latest breakthrough in SiC power device technology: the industry's first 1700-V 45mOhm SiC MOSFET. MOSFET is designed to support new 1500V bus applications in topologies such a boost converters and Aux power supplies. Optimized for high-frequency power electronics applications, including renewable-energy inverters, battery charging systems, and three-phase industrial power supplies, the new 1700-V platform enables smaller and higher-efficiency next-generation power conversion systems. 1700V of blocking voltage with low RDS(on) High-speed switching with low capacitances Avalanche ruggedness Fast intrinsic diode with low reverse recovery (Qrr) Easy to parallel and simple to drive

Wolfspeed introduces its latest breakthrough in SiC power device technology: the industry's first 1700-V 45mOhm SiC MOSFET. MOSFET is designed to support new 1500V bus applications in topologies such a boost converters and Aux power supplies. Optimized for high-frequency power electronics applications, including renewable-energy inverters, battery charging systems, and three-phase industrial power supplies, the new 1700-V platform enables smaller and higher-efficiency next-generation power conversion systems.

1700V of blocking voltage with low RDS(on)

High-speed switching with low capacitances

Avalanche ruggedness

Fast intrinsic diode with low reverse recovery (Qrr)

Easy to parallel and simple to drive

THÔNG SỐ KỸ THUẬT
Manufacturer Wolfspeed
Manufacturer Part No. C2M0045170D
Channel Type N
Maximum Continuous Drain Current 72A
Maximum Drain Source Voltage 1700V
Package Type TO-247
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 45mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 4V
Minimum Gate Threshold Voltage 2V
Maximum Power Dissipation 520W
Transistor Configuration Single
Maximum Gate Source Voltage -10 V, 25 V
Number of Elements per Chip 1
Typical Gate Charge @ Vgs 188 nC @ 5/20V
Width 5.21mm
Length 16.13mm
Maximum Operating Temperature +150°C
Transistor Material SiC
Height 21.1mm
Minimum Operating Temperature -40°C

Giá: Liên hệ – gửi mã và số lượng về [email protected] để nhận báo giá nhanh.

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