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Wolfspeed(CREE) Transistor: N-MOSFET; SiC; unipolar; 900V; 36A; 125W; TO247-3; 30ns [C3M0065090D]

Mã nhà sản xuất
C3M0065090D
Thương hiệu
Mã kho
915-8836
Liên hệ
📩 Liên hệ để có giá tốt: [email protected]

Wolfspeed Silicon Carbide Power MOSFETs Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency. Enhancement-mode N-channel SiC technology High Drain-Source breakdown voltages - up to 1200V Multiple devices are easy to parallel and simple to drive High speed switching with low on-resistance Latch-up resistant operation MOSFET Transistors, Wolfspeed

Wolfspeed Silicon Carbide Power MOSFETs

Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.

  • Enhancement-mode N-channel SiC technology
  • High Drain-Source breakdown voltages - up to 1200V
  • Multiple devices are easy to parallel and simple to drive
  • High speed switching with low on-resistance
  • Latch-up resistant operation

MOSFET Transistors, Wolfspeed

THÔNG SỐ KỸ THUẬT
Manufacturer Wolfspeed
Manufacturer Part No. C3M0065090D
Channel Type N
Maximum Continuous Drain Current 36A
Maximum Drain Source Voltage 900V
Package Type TO-247
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 78mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 2.1V
Minimum Gate Threshold Voltage 1.8V
Maximum Power Dissipation 125W
Transistor Configuration Single
Maximum Gate Source Voltage -8 V, +18 V
Number of Elements per Chip 1
Maximum Operating Temperature +150°C
Transistor Material SiC
Width 21.1mm
Typical Gate Charge @ Vgs 30.4 nC @ 15 V
Length 16.13mm
Height 5.21mm
Minimum Operating Temperature -55°C
Forward Diode Voltage 4.8V

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