Skip to content

Wolfspeed(CREE) Transistor: N-MOSFET; SiC; unipolar; 900V; 35A; 113W; D2PAK-7; 16ns [C3M0065090J]

Mã nhà sản xuất
C3M0065090J
Thương hiệu
Mã kho
162-9713
Liên hệ
📩 Liên hệ để có giá tốt: [email protected]

Wolfspeed Silicon Carbide Power MOSFETs Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency. Enhancement-mode N-channel SiC technology High Drain-Source breakdown voltages - up to 1200V Multiple devices are easy to parallel and simple to drive High speed switching with low on-resistance Latch-up resistant operation MOSFET Transistors, Wolfspeed

Wolfspeed Silicon Carbide Power MOSFETs

Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.

  • Enhancement-mode N-channel SiC technology
  • High Drain-Source breakdown voltages - up to 1200V
  • Multiple devices are easy to parallel and simple to drive
  • High speed switching with low on-resistance
  • Latch-up resistant operation

MOSFET Transistors, Wolfspeed

THÔNG SỐ KỸ THUẬT
Manufacturer Wolfspeed
Manufacturer Part No. C3M0065090J
Channel Type N
Maximum Continuous Drain Current 35A
Maximum Drain Source Voltage 900V
Package Type D2PAK (TO-263)
Mounting Type Surface Mount
Pin Count 7
Maximum Drain Source Resistance 78mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 2.1V
Minimum Gate Threshold Voltage 1.8V
Maximum Power Dissipation 113W
Transistor Configuration Single
Maximum Gate Source Voltage 25V
Typical Gate Charge @ Vgs 30 nC @ 15 V
Width 10.99mm
Transistor Material SiC
Maximum Operating Temperature +150°C
Number of Elements per Chip 1
Length 10.23mm
Minimum Operating Temperature -55°C
Forward Diode Voltage 4.4V
Height 4.57mm

Giá: Liên hệ – gửi mã và số lượng về [email protected] để nhận báo giá nhanh.

Compare products

{"one"=>"Select 2 or 3 items to compare", "other"=>"{{ count }} of 3 items selected"}

Select first item to compare

Select second item to compare

Select third item to compare

Compare