ROHMRF4E110GNTRRF4E110GN N-Channel MOSFET, 11 A, 30 V, 8-Pin DFN RF4E110GNTR

Channel Mode EnhancementChannel Type NForward Diode Voltage 1.2VMaximum Continuous Drain Current 11A

Mã nhà sản xuất

RF4E110GNTR

Thương hiệu

Quy cách đóng gói

125 cái (băng liên tục)

Mã kho

1333281

Liên hệ

MOSFET Transistors, ROHM Semiconductor

THÔNG SỐ KỸ THUẬT
Manufacturer	ROHM
Manufacturer Part No.	RF4E110GNTR
Channel Type	N
Maximum Continuous Drain Current	11A
Maximum Drain Source Voltage	30V
Series	RF4E110GN
Package Type	DFN
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	16.5mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2.5V
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	2W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Width	2.1mm
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	7.4 nC @ 10 V
Length	2.1mm
Maximum Operating Temperature	+150°C
Forward Diode Voltage	1.2V
Height	0.6mm

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