DIODES INC.ZTX658Bipolar (BJT) Single Transistor NPN 400 V 500 mA 1 W E-Line Through Hole
Collector Emitter Voltage Max 400VContinuous Collector Current 500mADC Current Gain hFE Min 50hFEPower Dissipation 1W
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Diodes Inc. ZTX658. Bipolar (BJT) Single Transistor NPN 400 V 500 mA 1 W E-Line Through Hole
Features:
- Bipolar (BJT) Single Transistor
- NPN
- 400 V
- 500 mA
- 1 W
- E-Line
- Through Hole