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DIODES INCORPORATEDDMN2450UFD-7Transistor: N-MOSFET

Channel Mode EnhancementChannel Type NForward Diode Voltage 1.2VMaximum Continuous Drain Current 900mA
Mã nhà sản xuất
DMN2450UFD-7
Thương hiệu
Mã kho
182-7197
Liên hệ
📩 Liên hệ để có giá tốt: CV@chanhvinh.com

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Low On-Resistance Very Low Gate Threshold Voltage, 1.0V Max Low Input Capacitance Fast Switching Speed ESD Protected Gate Totally Lead-Free Halogen and Antimony Free. "Green" Device Applications Power Management Functions Battery Operated Systems and Solid-State Relays Load Switch

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Low On-Resistance

Very Low Gate Threshold Voltage, 1.0V Max

Low Input Capacitance

Fast Switching Speed

ESD Protected Gate

Totally Lead-Free

Halogen and Antimony Free. "Green" Device

Applications

Power Management Functions

Battery Operated Systems and Solid-State Relays

Load Switch

THÔNG SỐ KỸ THUẬT
Manufacturer DiodesZetex
Manufacturer Part No. DMN2450UFD-7
Channel Type N
Maximum Continuous Drain Current 900mA
Maximum Drain Source Voltage 20V
Package Type X1-DFN1212
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source Resistance 1.6mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 1V
Minimum Gate Threshold Voltage 0.45V
Maximum Power Dissipation 890 mW
Transistor Configuration Single
Maximum Gate Source Voltage ±12V
Width 1.25mm
Length 1.25mm
Typical Gate Charge @ Vgs 0.7 nC @ 4.5 V
Number of Elements per Chip 1
Maximum Operating Temperature +150°C
Height 0.48mm
Forward Diode Voltage 1.2V
Minimum Operating Temperature -55°C

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