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DMN3020UTS-13 3943580

DIODES INCORPORATEDDMN3020UTS-13Transistor: N-MOSFET

Channel Mode EnhancementChannel Type NForward Diode Voltage 1.2VMaximum Continuous Drain Current 15A
Mã nhà sản xuất
DMN3020UTS-13
Thương hiệu
DIODES INCORPORATED
Mã kho
182-7013
Liên hệ
📩 Liên hệ để có giá tốt: CV@chanhvinh.com

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Low Gate Threshold Voltage Low On-Resistance ESD Protected Gate Applications Battery Management Application Power Management Functions DC-DC Converters

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Low Gate Threshold Voltage Low On-Resistance ESD Protected Gate Applications Battery Management Application Power Management Functions DC-DC Converters

THÔNG SỐ KỸ THUẬT
Manufacturer DiodesZetex
Manufacturer Part No. DMN3020UTS-13
Channel Type N
Maximum Continuous Drain Current 15A
Maximum Drain Source Voltage 30V
Package Type TSSOP
Mounting Type Surface Mount
Pin Count 8
Maximum Drain Source Resistance 50mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 1V
Minimum Gate Threshold Voltage 0.4V
Maximum Power Dissipation 1.4W
Transistor Configuration Single
Maximum Gate Source Voltage ±12V
Number of Elements per Chip 1
Maximum Operating Temperature +150°C
Typical Gate Charge @ Vgs 27 nC @ 8V
Width 3.1mm
Length 4.5mm
Height 1.02mm
Automotive Standard AEC-Q101
Minimum Operating Temperature -55°C
Forward Diode Voltage 1.2V

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