DIODES INCORPORATEDDMN3731U-7Transistor: N-MOSFET
Channel Mode EnhancementChannel Type NMaximum Continuous Drain Current 900mAMaximum Gate Threshold Voltage 0.95V
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The DiodesZetex 30V N- channel enhancement mode MOSFET is designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for high-efficiency power management application. Its gate-source voltage is 8 V with 0.4 W thermal power dissipation. Low VGS(TH), can be driven directly from a battery ESD protected gate
The DiodesZetex 30V N- channel enhancement mode MOSFET is designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for high-efficiency power management application. Its gate-source voltage is 8 V with 0.4 W thermal power dissipation.
Low VGS(TH), can be driven directly from a battery
ESD protected gate