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DMN6069SE-13 3943647

DIODES INCORPORATEDDMN6069SE-13Transistor: N-MOSFET

Channel Mode EnhancementChannel Type NForward Diode Voltage 1.1VMaximum Continuous Drain Current 8A
Mã nhà sản xuất
DMN6069SE-13
Thương hiệu
DIODES INCORPORATED
Mã kho
182-7095
Liên hệ
📩 Liên hệ để có giá tốt: CV@chanhvinh.com

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications Motor control Transformer driving switch DC-DC Converters Power management functions Uninterrupted power supply

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Applications

Motor control

Transformer driving switch

DC-DC Converters

Power management functions

Uninterrupted power supply

THÔNG SỐ KỸ THUẬT
Manufacturer DiodesZetex
Manufacturer Part No. DMN6069SE-13
Channel Type N
Maximum Continuous Drain Current 8A
Maximum Drain Source Voltage 60V
Package Type SOT-223
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source Resistance 100mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 3V
Minimum Gate Threshold Voltage 1V
Maximum Power Dissipation 11W
Transistor Configuration Single
Maximum Gate Source Voltage ±20V
Number of Elements per Chip 1
Maximum Operating Temperature +150°C
Typical Gate Charge @ Vgs 16 nC @ 10V
Length 6.55mm
Width 3.55mm
Automotive Standard AEC-Q101
Height 1.65mm
Forward Diode Voltage 1.1V
Minimum Operating Temperature -55°C

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