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DMN62D1LFB-7B 3943663

DIODES INCORPORATEDDMN62D1LFB-7BTransistor: N-MOSFET

Channel Mode EnhancementChannel Type NForward Diode Voltage 1.3VMaximum Continuous Drain Current 407mA
Mã nhà sản xuất
DMN62D1LFB-7B
Thương hiệu
DIODES INCORPORATED
Mã kho
182-7128
Liên hệ
📩 Liên hệ để có giá tốt: CV@chanhvinh.com

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Totally Lead-Free Halogen and Antimony Free. "Green" Device Application Load Switch

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Low On-Resistance

Low Input Capacitance

Fast Switching Speed

Low Input/Output Leakage

ESD Protected

Totally Lead-Free

Halogen and Antimony Free. "Green" Device

Application

Load Switch

THÔNG SỐ KỸ THUẬT
Manufacturer DiodesZetex
Manufacturer Part No. DMN62D1LFB-7B
Channel Type N
Maximum Continuous Drain Current 407mA
Maximum Drain Source Voltage 60V
Package Type X1-DFN1006
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source Resistance 3mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 1V
Minimum Gate Threshold Voltage 0.6V
Maximum Power Dissipation 500 mW
Transistor Configuration Single
Maximum Gate Source Voltage ±20V
Typical Gate Charge @ Vgs 0.45 nC @ 4.5V
Length 1.07mm
Maximum Operating Temperature +150°C
Width 0.67mm
Number of Elements per Chip 1
Forward Diode Voltage 1.3V
Height 0.48mm
Minimum Operating Temperature -55°C

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