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DIODES INCORPORATEDDMP1005UFDF-7Transistor: P-MOSFET

Channel Mode EnhancementChannel Type PForward Diode Voltage 1.2VMaximum Continuous Drain Current 12.8A
Mã nhà sản xuất
DMP1005UFDF-7
Thương hiệu
Mã kho
182-7235
Liên hệ
📩 Liên hệ để có giá tốt: CV@chanhvinh.com

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. 0.6mm Profile – Ideal for Low Profile Applications PCB Footprint of 4mm2 Low Gate Threshold Voltage Low On-Resistance ESD Protected up to 8kV Applications Battery Management Application Power Management Functions Load Switch

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

0.6mm Profile – Ideal for Low Profile Applications

PCB Footprint of 4mm2

Low Gate Threshold Voltage

Low On-Resistance

ESD Protected up to 8kV

Applications

Battery Management Application

Power Management Functions

Load Switch

THÔNG SỐ KỸ THUẬT
Manufacturer DiodesZetex
Manufacturer Part No. DMP1005UFDF-7
Channel Type P
Maximum Continuous Drain Current 12.8A
Maximum Drain Source Voltage 12V
Package Type U-DFN2020
Mounting Type Surface Mount
Pin Count 6
Maximum Drain Source Resistance 18.5mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 1V
Minimum Gate Threshold Voltage 0.3V
Maximum Power Dissipation 2.1W
Transistor Configuration Single
Maximum Gate Source Voltage ±8V
Typical Gate Charge @ Vgs 47 nC @ 8V
Width 2.05mm
Maximum Operating Temperature +150°C
Number of Elements per Chip 1
Length 2.05mm
Height 0.58mm
Minimum Operating Temperature -55°C
Forward Diode Voltage 1.2V

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