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DMT6018LDR-13 3944167

DIODES INCORPORATEDDMT6018LDR-13Transistor: N-MOSFET

Channel Mode EnhancementChannel Type NMaximum Continuous Drain Current 11.4AMaximum Gate Threshold Voltage 3V
Mã nhà sản xuất
DMT6018LDR-13
Thương hiệu
DIODES INCORPORATED
Mã kho
182-7493
Liên hệ
📩 Liên hệ để có giá tốt: CV@chanhvinh.com

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Applications Power Management Functions Analog Switch

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Low On-Resistance

Low Input Capacitance

Fast Switching Speed

Low Input/Output Leakage

Applications

Power Management Functions

Analog Switch

THÔNG SỐ KỸ THUẬT
Manufacturer DiodesZetex
Manufacturer Part No. DMT6018LDR-13
Channel Type N
Maximum Continuous Drain Current 11.4A
Maximum Drain Source Voltage 60V
Package Type V-DFN3030
Mounting Type Surface Mount
Pin Count 8
Maximum Drain Source Resistance 26mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 3V
Minimum Gate Threshold Voltage 1V
Maximum Power Dissipation 1.9W
Maximum Gate Source Voltage ±20V
Number of Elements per Chip 2
Length 3.05mm
Width 3.05mm
Typical Gate Charge @ Vgs 13.9 nC @ 10V
Maximum Operating Temperature +150°C
Minimum Operating Temperature -55°C
Height 0.8mm

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