EPIGAPInfrared Emitter High Intensity 770 nm 40 ° 1206 7.1 mW/Sr 40 ns 40 ns
Angle of Half Intensity 40°Diode Case Style 1206Fall Time tf 40nsForward Current If(AV) 30mA
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Epigap OIS 330 770. Infrared Emitter High Intensity 770 nm 40 ° 1206 7.1 mW/Sr 40 ns 40 ns
Features:
- Infrared Emitter
- High Intensity
- 770 nm
- 40 °
- 1206
- 7.1 mW/Sr
- 40 ns