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INFINEONAUIRF7341QDual N-Channel MOSFET, 5.1 A, 55 V, 8-Pin SOIC Infineon AUIRF7341Q

Channel Mode EnhancementChannel Type NMaximum Continuous Drain Current 5.1AMaximum Gate Threshold Voltage 3V
Mã nhà sản xuất
AUIRF7341Q
Thương hiệu
Quy cách đóng gói
125 cái (băng liên tục)
Mã kho
7604274
Liên hệ
📩 Liên hệ để có giá tốt: CV@chanhvinh.com 📄 Datasheet (PDF)

Automotive Dual Power MOSFET, Infineon

Infineon's HEXFET® MOSFET technology offers AECQ-101 automotive qualified Dual die MOSFET devices. Dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose dual N-channel, dual P-channel or dual N/P-channel configurations.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

THÔNG SỐ KỸ THUẬT
Manufacturer Infineon
Manufacturer Part No. AUIRF7341Q
Channel Type N
Maximum Continuous Drain Current 5.1A
Maximum Drain Source Voltage 55V
Package Type SOIC
Mounting Type Surface Mount
Pin Count 8
Maximum Drain Source Resistance 70mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 3V
Minimum Gate Threshold Voltage 1V
Maximum Power Dissipation 2.4W
Transistor Configuration Isolated
Maximum Gate Source Voltage -20 V, +20 V
Width 4mm
Length 5mm
Number of Elements per Chip 2
Typical Gate Charge @ Vgs 29 nC @ 10 V
Maximum Operating Temperature +175°C
Transistor Material Si
Series HEXFET
Minimum Operating Temperature -55°C
Height 1.5mm

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📄 Datasheet INFINEON AUIRF7341Q (PDF)