INFINEONAUIRF7341QTRDual N-Channel MOSFET, 5.1 A, 55 V, 8-Pin SO
Channel Type NMaximum Continuous Drain Current 5.1AMaximum Gate Threshold Voltage 3VKiểu lắp Surface Mount
Liên hệ
The Infineon HEXFET power MOSFET in a dual SO-8 package utilize the latest processing techniques to achieve extremely low on-resistance per silicon area. The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications.
Advanced planar technology
Dynamic dV/dT rating
Logic level gate drive
175°C operating temperature
Fast switching
Lead free
RoHS compliant
Automotive qualified