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INFINEONBSC0803LSATMA1Silicon N-Channel MOSFET Transistor, 44 A, 100 V, 8-Pin SuperSO8 5 x 6 BSC0803LSATMA1

Channel Mode EnhancementChannel Type NMaximum Continuous Drain Current 44AMaximum Gate Threshold Voltage 2.3V
Mã nhà sản xuất
BSC0803LSATMA1
Thương hiệu
Quy cách đóng gói
10 cái (băng liên tục)
Mã kho
2350604
Liên hệ
📩 Liên hệ để có giá tốt: [email protected] 📄 Datasheet (PDF)

The Infineon OptiMOSTM5 power transistor operated on 100V and drain current of 4A.The OptiMOSTM5 Infineon's portfolio targeting USB-PD and adapter applications. The products offer fast ramp up and optimized lead times. OptiMOS™ low voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction. OptiMOS™ PD features quality products in compact, lightweight packages.

Optimized for high performance SMPS

100% avalanche tested

Superior thermal resistance

N-channel, logic level

Pb-free lead plating

RoHS compliant

Halogen-free according to IEC61249-2-21

THÔNG SỐ KỸ THUẬT
Manufacturer Infineon
Manufacturer Part No. BSC0803LSATMA1
Channel Type N
Maximum Continuous Drain Current 44A
Maximum Drain Source Voltage 100V
Package Type SuperSO8 5 x 6
Mounting Type Surface Mount
Pin Count 8
Maximum Drain Source Resistance 0.0146 Ω
Channel Mode Enhancement
Maximum Gate Threshold Voltage 2.3V
Number of Elements per Chip 1
Transistor Material Silicon

Giá: Liên hệ – gửi mã và số lượng về [email protected] để nhận báo giá nhanh.

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📄 Datasheet INFINEON BSC0803LSATMA1 (PDF)