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INFINEONBSS123IXTSA1N-Channel MOSFET, 190 mA, 100 V Depletion, 4-Pin PG-SOT223-4 Infineon BSS123IXTSA1

Channel Mode DepletionChannel Type NMaximum Continuous Drain Current 190mAMaximum Gate Threshold Voltage 1.8V
Mã nhà sản xuất
BSS123IXTSA1
Thương hiệu
Quy cách đóng gói
Cuộn 3000 cái
Mã kho
2250556
Liên hệ
📩 Liên hệ để có giá tốt: [email protected] 📄 Datasheet (PDF)

The Infineon BSS123I is the small signal, small power N- and P-channel MOSFETs provide a wide range of VGS(th) levels and RDS(on) values, as well as multiple voltage classes. This MOSFET have enhancement and depletion-mode options.

PCB-space and cost savings

Gate drive flexibility

Reduced design complexity

Environmentally friendly

High overall efficiency

THÔNG SỐ KỸ THUẬT
Manufacturer Infineon
Manufacturer Part No. BSS123IXTSA1
Channel Type N
Maximum Continuous Drain Current 190mA
Maximum Drain Source Voltage 100V
Package Type SOT-223
Series OptiMOS™
Mounting Type Surface Mount
Pin Count 4
Channel Mode Depletion
Maximum Gate Threshold Voltage 1.8V
Number of Elements per Chip 1

Giá: Liên hệ – gửi mã và số lượng về [email protected] để nhận báo giá nhanh.

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📄 Datasheet INFINEON BSS123IXTSA1 (PDF)