INFINEONDF80R12W2H3FB11BPSA1IGBT Module Dual
Collector Emitter Saturation Voltage 1.55VCollector Emitter Voltage Max 1.2kVIGBT Configuration Dual [Half Bridge]IGBT Technology IGBT 3 [Trench/Field Stop]
Liên hệ
Infineon DF80R12W2H3FB11BPSA1. IGBT Module Dual [Half Bridge] 80 A 1.55 V 150 °C Module
Features:
- IGBT Module
- Dual [Half Bridge]
- 80 A
- 1.55 V
- 150 °C
- Module