INFINEONFF06MR12A04MA2AKSA1Silicon Carbide MOSFET Half Bridge Dual N Channel 190 A 1.2 kV 5560 µohm Module
Channel Type Dual N ChannelContinuous Drain Current Id 190AMOSFET Module Configuration Half BridgeNo. of Pins 11Pins
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Infineon FF06MR12A04MA2AKSA1. Silicon Carbide MOSFET Half Bridge Dual N Channel 190 A 1.2 kV 5560 µohm Module
Features:
- Silicon Carbide MOSFET
- Half Bridge
- Dual N Channel
- 190 A
- 1.2 kV
- 5560 µohm
- Module
















