INFINEONFF1200R17IP5BPSA1IGBT Module Dual
Collector Emitter Saturation Voltage 1.75VCollector Emitter Voltage Max 1.7kVIGBT Configuration Dual [Half Bridge]IGBT Technology IGBT 5 [Trench/Field Stop]
Liên hệ
Infineon FF1200R17IP5BPSA1. IGBT Module Dual [Half Bridge] 1.2 kA 1.75 V 175 °C Module
Features:
- IGBT Module
- Dual [Half Bridge]
- 1.2 kA
- 1.75 V
- 175 °C
- Module